Planar GaAs IC technology: Applications for digital LSI

Planar GaAs IC technology: Applications for digital LSI

This technology utilizes multiple localized ion implantations directly into semi-insulating GaAs substrates, with unimplanted areas providing isolation between circuit elements. This approach allows for high yield, high density circuits, with optimization of various types of devices (e.g., GaAs MESF...

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Veröffentlicht in:IEEE journal of solid-state circuits 1978-08, Vol.13 (4), p.419-426
Hauptverfasser: Eden, R.C., Welch, B.M., Zucca, R.
Format: Artikel
Sprache:eng
Schlagworte:
Application specific integrated circuits
Digital integrated circuits
Gallium arsenide
Integrated circuit yield
Ion implantation
Isolation technology
Large scale integration
Logic circuits
Logic devices
Schottky diodes
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Beschreibung
Zusammenfassung:This technology utilizes multiple localized ion implantations directly into semi-insulating GaAs substrates, with unimplanted areas providing isolation between circuit elements. This approach allows for high yield, high density circuits, with optimization of various types of devices (e.g., GaAs MESFETs, high-speed Schottky-barrier diodes, etc.) made possible by optimizing the implantation profile for each type of device. The application of this fabrication technology for high-speed, ultra low power digital integrated circuits using a new circuit approach called Schottky diode-FET logic (SDFL) is described. Experimental GaAS SDFL logic ICs with LSI/VLSI compatible power levels (200-500 /spl mu/W/gate) and circuit densities (
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1978.1051071