Distortion in bipolar transistor variable-gain amplifiers

Distortion in bipolar transistor variable-gain amplifiers

Wide-band variable-gain amplifiers consisting of bipolar junction transistors and exhibiting maximum gain larger than unity are considered. The mechanisms of distortion are analyzed at low and high frequencies. Approximate expressions for distortion are derived and give good agreement with computati...

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Veröffentlicht in:IEEE journal of solid-state circuits 1973-08, Vol.8 (4), p.275-282
Hauptverfasser: Sansen, W.M.C., Meyer, R.G.
Format: Artikel
Sprache:eng
Schlagworte:
Bipolar transistors
Electrical engineering
Frequency
Laboratories
Logic circuits
Military computing
Nonlinear distortion
Schottky barriers
Schottky diodes
Solid state circuits
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Zusammenfassung:Wide-band variable-gain amplifiers consisting of bipolar junction transistors and exhibiting maximum gain larger than unity are considered. The mechanisms of distortion are analyzed at low and high frequencies. Approximate expressions for distortion are derived and give good agreement with computational results and measurements. The most common high-performance variable-gain circuit realizations are discussed and compared for distortion performance.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1973.1050396