A direct-coupled hybrid IC amplifier with 1-ns rise time
This paper describes the design and operation of a wide-band direct-coupled pulse amplifier, with a voltage gain of 10 and a rise time of 1 ns. Computer-aided analysis and simulation are used to optimize the design and to predict the performance of the amplifier. Good agreement is obtained between t...
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Veröffentlicht in: | IEEE journal of solid-state circuits 1969-04, Vol.4 (2), p.86-88 |
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container_title | IEEE journal of solid-state circuits |
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creator | Jackson, H.G. Mattis, J.A. |
description | This paper describes the design and operation of a wide-band direct-coupled pulse amplifier, with a voltage gain of 10 and a rise time of 1 ns. Computer-aided analysis and simulation are used to optimize the design and to predict the performance of the amplifier. Good agreement is obtained between the predicted and experimental results. In an attempt to improve the frequency response through the reduction of parasitic capacitive and inductive effects, the amplifier has been fabricated as a hybrid IC by use of thin-film resistors and silicon chip transistors mounted on a ceramic substrate. |
doi_str_mv | 10.1109/JSSC.1969.1049966 |
format | Article |
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Computer-aided analysis and simulation are used to optimize the design and to predict the performance of the amplifier. Good agreement is obtained between the predicted and experimental results. In an attempt to improve the frequency response through the reduction of parasitic capacitive and inductive effects, the amplifier has been fabricated as a hybrid IC by use of thin-film resistors and silicon chip transistors mounted on a ceramic substrate.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.1969.1049966</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analytical models ; Broadband amplifiers ; Computational modeling ; Computer aided analysis ; Hybrid integrated circuits ; Operational amplifiers ; Predictive models ; Pulse amplifiers ; Thin film transistors ; Voltage</subject><ispartof>IEEE journal of solid-state circuits, 1969-04, Vol.4 (2), p.86-88</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-346780349d813e4e000323b57269a9d02b6eea37b55943b8befd15d2c11fde273</citedby><cites>FETCH-LOGICAL-c358t-346780349d813e4e000323b57269a9d02b6eea37b55943b8befd15d2c11fde273</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1049966$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1049966$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jackson, H.G.</creatorcontrib><creatorcontrib>Mattis, J.A.</creatorcontrib><title>A direct-coupled hybrid IC amplifier with 1-ns rise time</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>This paper describes the design and operation of a wide-band direct-coupled pulse amplifier, with a voltage gain of 10 and a rise time of 1 ns. Computer-aided analysis and simulation are used to optimize the design and to predict the performance of the amplifier. Good agreement is obtained between the predicted and experimental results. In an attempt to improve the frequency response through the reduction of parasitic capacitive and inductive effects, the amplifier has been fabricated as a hybrid IC by use of thin-film resistors and silicon chip transistors mounted on a ceramic substrate.</description><subject>Analytical models</subject><subject>Broadband amplifiers</subject><subject>Computational modeling</subject><subject>Computer aided analysis</subject><subject>Hybrid integrated circuits</subject><subject>Operational amplifiers</subject><subject>Predictive models</subject><subject>Pulse amplifiers</subject><subject>Thin film transistors</subject><subject>Voltage</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1969</creationdate><recordtype>article</recordtype><recordid>eNqNkD1PwzAQhi0EEqXwAxCLJ7YUnx079lhFfBRVYihIbFYSX1SjpAl2KtR_T6owMHY6vbrnPZ0eQm6BLQCYeXjdbPIFGGUWwFJjlDojM5BSJ5CJz3MyYwx0Yjhjl-Qqxq8xpqmGGdFL6nzAakiqbt836Oj2UAbv6CqnRds3vvYY6I8fthSSXaTBR6SDb_GaXNRFE_Hmb87Jx9Pje_6SrN-eV_lynVRC6iERqco0E6lxGgSmyBgTXJQy48oUxjFeKsRCZKWUJhWlLrF2IB2vAGqHPBNzcj_d7UP3vcc42NbHCpum2GG3j5ZrnenUnAJmnINUJ4B8_EXJEYQJrEIXY8Da9sG3RThYYPZo3R6t26N1-2d97NxNHY-I__hp-wshp3uH</recordid><startdate>19690401</startdate><enddate>19690401</enddate><creator>Jackson, H.G.</creator><creator>Mattis, J.A.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>JG9</scope><scope>7U5</scope></search><sort><creationdate>19690401</creationdate><title>A direct-coupled hybrid IC amplifier with 1-ns rise time</title><author>Jackson, H.G. ; Mattis, J.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-346780349d813e4e000323b57269a9d02b6eea37b55943b8befd15d2c11fde273</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1969</creationdate><topic>Analytical models</topic><topic>Broadband amplifiers</topic><topic>Computational modeling</topic><topic>Computer aided analysis</topic><topic>Hybrid integrated circuits</topic><topic>Operational amplifiers</topic><topic>Predictive models</topic><topic>Pulse amplifiers</topic><topic>Thin film transistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jackson, H.G.</creatorcontrib><creatorcontrib>Mattis, J.A.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jackson, H.G.</au><au>Mattis, J.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A direct-coupled hybrid IC amplifier with 1-ns rise time</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1969-04-01</date><risdate>1969</risdate><volume>4</volume><issue>2</issue><spage>86</spage><epage>88</epage><pages>86-88</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>This paper describes the design and operation of a wide-band direct-coupled pulse amplifier, with a voltage gain of 10 and a rise time of 1 ns. Computer-aided analysis and simulation are used to optimize the design and to predict the performance of the amplifier. Good agreement is obtained between the predicted and experimental results. In an attempt to improve the frequency response through the reduction of parasitic capacitive and inductive effects, the amplifier has been fabricated as a hybrid IC by use of thin-film resistors and silicon chip transistors mounted on a ceramic substrate.</abstract><pub>IEEE</pub><doi>10.1109/JSSC.1969.1049966</doi><tpages>3</tpages></addata></record> |
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ispartof | IEEE journal of solid-state circuits, 1969-04, Vol.4 (2), p.86-88 |
issn | 0018-9200 1558-173X |
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source | IEEE Electronic Library (IEL) |
subjects | Analytical models Broadband amplifiers Computational modeling Computer aided analysis Hybrid integrated circuits Operational amplifiers Predictive models Pulse amplifiers Thin film transistors Voltage |
title | A direct-coupled hybrid IC amplifier with 1-ns rise time |
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