A direct-coupled hybrid IC amplifier with 1-ns rise time
This paper describes the design and operation of a wide-band direct-coupled pulse amplifier, with a voltage gain of 10 and a rise time of 1 ns. Computer-aided analysis and simulation are used to optimize the design and to predict the performance of the amplifier. Good agreement is obtained between t...
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Veröffentlicht in: | IEEE journal of solid-state circuits 1969-04, Vol.4 (2), p.86-88 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This paper describes the design and operation of a wide-band direct-coupled pulse amplifier, with a voltage gain of 10 and a rise time of 1 ns. Computer-aided analysis and simulation are used to optimize the design and to predict the performance of the amplifier. Good agreement is obtained between the predicted and experimental results. In an attempt to improve the frequency response through the reduction of parasitic capacitive and inductive effects, the amplifier has been fabricated as a hybrid IC by use of thin-film resistors and silicon chip transistors mounted on a ceramic substrate. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.1969.1049966 |