Novel Group-IV Alloy-based MOS Field-Effect Phototransistors for Near-Infrared Applications

This work describes the novel Si 1-x Sn x alloy-based n -metal-oxide-semiconductor phototransistors (nMOSPTs) grown on silicon (Si) substrate via Si 1-x Sn x ( x =3.6%) virtual substrate (VS) for near-infrared (NIR) applications. The concept of transferring high-speed optical signals directly to the...

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Veröffentlicht in:	IEEE sensors journal 2023-08, Vol.23 (15), p.1-1
Hauptverfasser:	Agarwal, Bhavika, Kumar, Harshvardhan
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorptivity Bandwidths CMOS high responsivity Lattices Metal oxide semiconductors Metals MOS phototransistor near-infrared Optical communication Optical sensors Photonic band gap Photonics Phototransistors Red shift Si biophotonics Si<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">1-x Sn<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">x alloy Silicon Silicon substrates Substrates Tin
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