InGaAs/InP SPAD With Monolithically Integrated Zinc-Diffused Resistor
Afterpulsing and optical crosstalk are significant performance limitations for applications employing near-infrared single-photon avalanche diodes (SPADs). In this paper, we describe an InGaAs/InP SPAD with monolithically integrated resistor that is fully compatible with the planar fabrication proce...
Gespeichert in:
| Veröffentlicht in: | IEEE journal of quantum electronics 2016-07, Vol.52 (7), p.1-7 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 7 |
|---|---|
| container_issue | 7 |
| container_start_page | 1 |
| container_title | IEEE journal of quantum electronics |
| container_volume | 52 |
| creator | Sanzaro, Mirko Calandri, Niccolo Ruggeri, Alessandro Tosi, Alberto |
| description | Afterpulsing and optical crosstalk are significant performance limitations for applications employing near-infrared single-photon avalanche diodes (SPADs). In this paper, we describe an InGaAs/InP SPAD with monolithically integrated resistor that is fully compatible with the planar fabrication process and provides a significant reduction of the avalanche charge and, thus, of afterpulsing and optical crosstalk. In order to have a fast SPAD reset ( |
| doi_str_mv | 10.1109/JQE.2016.2567063 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_JQE_2016_2567063</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7469828</ieee_id><sourcerecordid>4073224071</sourcerecordid><originalsourceid>FETCH-LOGICAL-c333t-682bc934ca75b54ad43fa34a41912b138f90985d4c949c4504cd6853f527d6ae3</originalsourceid><addsrcrecordid>eNo9kE1Lw0AQhhdRsFbvgpeA56Q7-73H0tYaqVi_ELws281GU2JSd9ND_70pLZ5mXnjeGXgQugacAWA9enieZQSDyAgXEgt6ggbAuUpBAj1FA4xBpRq0PEcXMa77yJjCAzTLm7kdx1HeLJPX5XiafFTdd_LYNm3dL5Wzdb1L8qbzX8F2vkg-q8al06ost7FPLz5WsWvDJTorbR391XEO0fvd7G1yny6e5vlkvEgdpbRLhSIrpylzVvIVZ7ZgtLSUWQYayAqoKjXWihfMaaYd45i5QihOS05kIaynQ3R7uLsJ7e_Wx86s221o-pcGpCaCARDeU_hAudDGGHxpNqH6sWFnAJu9LNPLMntZ5iirr9wcKpX3_h-XTGhFFP0DlB5jQw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1792641125</pqid></control><display><type>article</type><title>InGaAs/InP SPAD With Monolithically Integrated Zinc-Diffused Resistor</title><source>IEEE Electronic Library (IEL)</source><creator>Sanzaro, Mirko ; Calandri, Niccolo ; Ruggeri, Alessandro ; Tosi, Alberto</creator><creatorcontrib>Sanzaro, Mirko ; Calandri, Niccolo ; Ruggeri, Alessandro ; Tosi, Alberto</creatorcontrib><description>Afterpulsing and optical crosstalk are significant performance limitations for applications employing near-infrared single-photon avalanche diodes (SPADs). In this paper, we describe an InGaAs/InP SPAD with monolithically integrated resistor that is fully compatible with the planar fabrication process and provides a significant reduction of the avalanche charge and, thus, of afterpulsing and optical crosstalk. In order to have a fast SPAD reset (<;50 ns), we fabricated quenching resistors ranging from 10 to 200 kΩ, smaller than what is available in the literature. The resistor, fabricated with the zinc diffusions already used for avoiding premature edge-breakdown, promptly reduces the avalanche current to a low value (~100 μA) in less than 1 ns, while an active circuit completes the quenching and enforces a well-defined hold-off. The proposed mixed-quenching approach guarantees an avalanche charge reduction of more than 20 times compared with similar plain SPADs, enough to reduce the hold-off time down to 1 μs. Finally, a compact singlephoton counting module based on this detector and featuring 70-ps photon-timing jitter is presented.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/JQE.2016.2567063</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>afterpulsing ; Capacitance ; Detectors ; InGaAs/InP ; Logic gates ; near-infrared detector ; NFAD ; photon counting ; Photonics ; Resistance ; Resistors ; single photon ; Single-Photon Avalanche Diode ; Temperature measurement</subject><ispartof>IEEE journal of quantum electronics, 2016-07, Vol.52 (7), p.1-7</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c333t-682bc934ca75b54ad43fa34a41912b138f90985d4c949c4504cd6853f527d6ae3</citedby><cites>FETCH-LOGICAL-c333t-682bc934ca75b54ad43fa34a41912b138f90985d4c949c4504cd6853f527d6ae3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7469828$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7469828$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Sanzaro, Mirko</creatorcontrib><creatorcontrib>Calandri, Niccolo</creatorcontrib><creatorcontrib>Ruggeri, Alessandro</creatorcontrib><creatorcontrib>Tosi, Alberto</creatorcontrib><title>InGaAs/InP SPAD With Monolithically Integrated Zinc-Diffused Resistor</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>Afterpulsing and optical crosstalk are significant performance limitations for applications employing near-infrared single-photon avalanche diodes (SPADs). In this paper, we describe an InGaAs/InP SPAD with monolithically integrated resistor that is fully compatible with the planar fabrication process and provides a significant reduction of the avalanche charge and, thus, of afterpulsing and optical crosstalk. In order to have a fast SPAD reset (<;50 ns), we fabricated quenching resistors ranging from 10 to 200 kΩ, smaller than what is available in the literature. The resistor, fabricated with the zinc diffusions already used for avoiding premature edge-breakdown, promptly reduces the avalanche current to a low value (~100 μA) in less than 1 ns, while an active circuit completes the quenching and enforces a well-defined hold-off. The proposed mixed-quenching approach guarantees an avalanche charge reduction of more than 20 times compared with similar plain SPADs, enough to reduce the hold-off time down to 1 μs. Finally, a compact singlephoton counting module based on this detector and featuring 70-ps photon-timing jitter is presented.</description><subject>afterpulsing</subject><subject>Capacitance</subject><subject>Detectors</subject><subject>InGaAs/InP</subject><subject>Logic gates</subject><subject>near-infrared detector</subject><subject>NFAD</subject><subject>photon counting</subject><subject>Photonics</subject><subject>Resistance</subject><subject>Resistors</subject><subject>single photon</subject><subject>Single-Photon Avalanche Diode</subject><subject>Temperature measurement</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhhdRsFbvgpeA56Q7-73H0tYaqVi_ELws281GU2JSd9ND_70pLZ5mXnjeGXgQugacAWA9enieZQSDyAgXEgt6ggbAuUpBAj1FA4xBpRq0PEcXMa77yJjCAzTLm7kdx1HeLJPX5XiafFTdd_LYNm3dL5Wzdb1L8qbzX8F2vkg-q8al06ost7FPLz5WsWvDJTorbR391XEO0fvd7G1yny6e5vlkvEgdpbRLhSIrpylzVvIVZ7ZgtLSUWQYayAqoKjXWihfMaaYd45i5QihOS05kIaynQ3R7uLsJ7e_Wx86s221o-pcGpCaCARDeU_hAudDGGHxpNqH6sWFnAJu9LNPLMntZ5iirr9wcKpX3_h-XTGhFFP0DlB5jQw</recordid><startdate>201607</startdate><enddate>201607</enddate><creator>Sanzaro, Mirko</creator><creator>Calandri, Niccolo</creator><creator>Ruggeri, Alessandro</creator><creator>Tosi, Alberto</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201607</creationdate><title>InGaAs/InP SPAD With Monolithically Integrated Zinc-Diffused Resistor</title><author>Sanzaro, Mirko ; Calandri, Niccolo ; Ruggeri, Alessandro ; Tosi, Alberto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c333t-682bc934ca75b54ad43fa34a41912b138f90985d4c949c4504cd6853f527d6ae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>afterpulsing</topic><topic>Capacitance</topic><topic>Detectors</topic><topic>InGaAs/InP</topic><topic>Logic gates</topic><topic>near-infrared detector</topic><topic>NFAD</topic><topic>photon counting</topic><topic>Photonics</topic><topic>Resistance</topic><topic>Resistors</topic><topic>single photon</topic><topic>Single-Photon Avalanche Diode</topic><topic>Temperature measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sanzaro, Mirko</creatorcontrib><creatorcontrib>Calandri, Niccolo</creatorcontrib><creatorcontrib>Ruggeri, Alessandro</creatorcontrib><creatorcontrib>Tosi, Alberto</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sanzaro, Mirko</au><au>Calandri, Niccolo</au><au>Ruggeri, Alessandro</au><au>Tosi, Alberto</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InGaAs/InP SPAD With Monolithically Integrated Zinc-Diffused Resistor</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>2016-07</date><risdate>2016</risdate><volume>52</volume><issue>7</issue><spage>1</spage><epage>7</epage><pages>1-7</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>Afterpulsing and optical crosstalk are significant performance limitations for applications employing near-infrared single-photon avalanche diodes (SPADs). In this paper, we describe an InGaAs/InP SPAD with monolithically integrated resistor that is fully compatible with the planar fabrication process and provides a significant reduction of the avalanche charge and, thus, of afterpulsing and optical crosstalk. In order to have a fast SPAD reset (<;50 ns), we fabricated quenching resistors ranging from 10 to 200 kΩ, smaller than what is available in the literature. The resistor, fabricated with the zinc diffusions already used for avoiding premature edge-breakdown, promptly reduces the avalanche current to a low value (~100 μA) in less than 1 ns, while an active circuit completes the quenching and enforces a well-defined hold-off. The proposed mixed-quenching approach guarantees an avalanche charge reduction of more than 20 times compared with similar plain SPADs, enough to reduce the hold-off time down to 1 μs. Finally, a compact singlephoton counting module based on this detector and featuring 70-ps photon-timing jitter is presented.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JQE.2016.2567063</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9197 |
| ispartof | IEEE journal of quantum electronics, 2016-07, Vol.52 (7), p.1-7 |
| issn | 0018-9197 1558-1713 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_JQE_2016_2567063 |
| source | IEEE Electronic Library (IEL) |
| subjects | afterpulsing Capacitance Detectors InGaAs/InP Logic gates near-infrared detector NFAD photon counting Photonics Resistance Resistors single photon Single-Photon Avalanche Diode Temperature measurement |
| title | InGaAs/InP SPAD With Monolithically Integrated Zinc-Diffused Resistor |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T12%3A26%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=InGaAs/InP%20SPAD%20With%20Monolithically%20Integrated%20Zinc-Diffused%20Resistor&rft.jtitle=IEEE%20journal%20of%20quantum%20electronics&rft.au=Sanzaro,%20Mirko&rft.date=2016-07&rft.volume=52&rft.issue=7&rft.spage=1&rft.epage=7&rft.pages=1-7&rft.issn=0018-9197&rft.eissn=1558-1713&rft.coden=IEJQA7&rft_id=info:doi/10.1109/JQE.2016.2567063&rft_dat=%3Cproquest_RIE%3E4073224071%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1792641125&rft_id=info:pmid/&rft_ieee_id=7469828&rfr_iscdi=true |