InGaAs/InP SPAD With Monolithically Integrated Zinc-Diffused Resistor

InGaAs/InP SPAD With Monolithically Integrated Zinc-Diffused Resistor

Afterpulsing and optical crosstalk are significant performance limitations for applications employing near-infrared single-photon avalanche diodes (SPADs). In this paper, we describe an InGaAs/InP SPAD with monolithically integrated resistor that is fully compatible with the planar fabrication proce...

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Veröffentlicht in:IEEE journal of quantum electronics 2016-07, Vol.52 (7), p.1-7
Hauptverfasser: Sanzaro, Mirko, Calandri, Niccolo, Ruggeri, Alessandro, Tosi, Alberto
Format: Artikel
Sprache:eng
Schlagworte:
afterpulsing
Capacitance
Detectors
InGaAs/InP
Logic gates
near-infrared detector
NFAD
photon counting
Photonics
Resistance
Resistors
single photon
Single-Photon Avalanche Diode
Temperature measurement
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Beschreibung
Zusammenfassung:Afterpulsing and optical crosstalk are significant performance limitations for applications employing near-infrared single-photon avalanche diodes (SPADs). In this paper, we describe an InGaAs/InP SPAD with monolithically integrated resistor that is fully compatible with the planar fabrication process and provides a significant reduction of the avalanche charge and, thus, of afterpulsing and optical crosstalk. In order to have a fast SPAD reset (
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2016.2567063