Experimental Investigations of Characteristic Temperatures of Hybrid Silicon Lasers

This paper investigates the characteristic temperatures of hybrid silicon lasers by decomposing them into the temperature dependency of modal gain, transparent current density, internal loss, and injection efficiency under pulsed operation, and comparing them to III-V broad area lasers fabricated us...

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Veröffentlicht in:IEEE journal of quantum electronics 2012-12, Vol.48 (12), p.1512-1518
Hauptverfasser: Park, Hyundai, Srinivasan, Pradeep, Davenport, Michael L., Sysak, Mathew N., Jones, Richard
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Sprache:eng
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Zusammenfassung:This paper investigates the characteristic temperatures of hybrid silicon lasers by decomposing them into the temperature dependency of modal gain, transparent current density, internal loss, and injection efficiency under pulsed operation, and comparing them to III-V broad area lasers fabricated using the same InP epitaxial structure. This paper reveals that the limiting factors of the characteristic temperatures for both types of lasers are the transparent current density and injection efficiency. The comparison suggests that there is no fundamental aspect in the hybrid laser architecture that degrades the characteristic temperatures.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2012.2222870