Low threshold InGaAsP/InP buried crescent laser with double current confinement structure

Low threshold InGaAsP/InP buried crescent laser with double current confinement structure

An InGaAsP/InP laser diode emitting at 1.3 μm with a crescent shaped active region is described. The active region is completely embedded in InP by a two-step LPE technique, and a double current confinement scheme is incorporated with two reverse biased p-n junctions at both sides of the active laye...

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Veröffentlicht in:IEEE journal of quantum electronics 1981-05, Vol.17 (5), p.646-650
Hauptverfasser: Oomura, E., Murotani, T., Higuchi, H., Namizaki, H., Susaki, W.
Format: Artikel
Sprache:eng
Schlagworte:
Diode lasers
Fiber lasers
Gallium arsenide
Indium phosphide
Laser modes
Laser stability
Optical fiber communication
Temperature sensors
Threshold current
Waveguide lasers
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Beschreibung
Zusammenfassung:An InGaAsP/InP laser diode emitting at 1.3 μm with a crescent shaped active region is described. The active region is completely embedded in InP by a two-step LPE technique, and a double current confinement scheme is incorporated with two reverse biased p-n junctions at both sides of the active layer. A threshold current as low as 20 mA has been achieved in CW operation at room temperature. Fundamental transverse mode operation with linear light output-current characteristics and single longitudinal mode oscillation have been obtained.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.1981.1071153