The GaAs P-N-P-N laser diode

The GaAs P-N-P-N laser diode

The general structure of double-heterojunction diode lasers is shown to be consistent with the required geometry of the Shockley diode or p-n-p-n switch. When the two devices are combined in a single structure, there results an extremely simple source of high optical power (>0.5-W) pulses of very...

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Veröffentlicht in:IEEE J. Quant. Electron., v. QE-10, no. 7, pp. 567-569 v. QE-10, no. 7, pp. 567-569, 1974-07, Vol.10 (7), p.567-569
Hauptverfasser: Lockwood, H., Etzold, K.-F., Stockton, T., Marinelli, D.
Format: Artikel
Sprache:eng
Schlagworte:
Communication system control
Control systems
Diode lasers
Gallium arsenide
GALLIUM ARSENIDES
Geometrical optics
N42210 -Engineering-Facilities & Equipment-Lasers
Optical control
Optical devices
Optical pulses
Optical switches
SEMICONDUCTOR LASERS- PERFORMANCE
Ultraviolet sources
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Zusammenfassung:The general structure of double-heterojunction diode lasers is shown to be consistent with the required geometry of the Shockley diode or p-n-p-n switch. When the two devices are combined in a single structure, there results an extremely simple source of high optical power (>0.5-W) pulses of very short duration (
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.1974.1068200