32-Gb/s OOK and 64-Gb/s PAM-4 Modulation Using a Single-Drive Silicon Mach-Zehnder Modulator with 2 V Drive Voltage

We demonstrate a high-efficiency silicon Mach-Zehnder modulator with U-shaped PN junctions. The depletion region of the U-shaped PN junction has a large overlap with the waveguide optical mode, leading to a low drive voltage. The calculated modulation efficiency is 0.33 V·cm at 0 V bias and 0.55 V·c...

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Veröffentlicht in:	IEEE photonics journal 2019-12, Vol.11 (6), p.1-10
Hauptverfasser:	Zhou, Gangqiang, Zhou, Linjie, Guo, Yuyao, Chen, Shuhuang, Lu, Liangjun, Liu, Lei, Chen, Jianping
Format:	Artikel
Sprache:	eng
Schlagworte:	Bandwidth Bias Bit error rate Depletion Electric potential Electrooptical waveguides Error correction high modulation efficiency Junctions Mach-Zehnder interferometers Mach-Zehnder modulator Modulation On-Off Keying OOK modulation P-n junctions PAM-4 modulation Pulse amplitude modulation Silicon Silicon modulator silicon photonics U-shaped PN junction Voltage
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Beschreibung
Zusammenfassung:	We demonstrate a high-efficiency silicon Mach-Zehnder modulator with U-shaped PN junctions. The depletion region of the U-shaped PN junction has a large overlap with the waveguide optical mode, leading to a low drive voltage. The calculated modulation efficiency is 0.33 V·cm at 0 V bias and 0.55 V·cm at -2 V bias. On-off keying (OOK) modulation and four-level pulse amplitude modulation (PAM-4) are achieved at 32 Gb/s and 64 Gb/s data rates under 2 V drive voltage, respectively. The bit error rate for the PAM-4 modulation is below the hard-decision forward error correction threshold of 3.8 × 10 -3 .
ISSN:	1943-0655 1943-0655 1943-0647
DOI:	10.1109/JPHOT.2019.2954597