Impact of Al Doping on Surface Passivation of TiO x on Si

Impact of Al Doping on Surface Passivation of TiO x on Si

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Veröffentlicht in:IEEE journal of photovoltaics 2020-07, Vol.10 (4), p.940-944
Hauptverfasser: Liang, Wensheng, Tong, Jingnan, Narangari, Parvathala, Armand, Stephane, Kho, Teng Choon, Ernst, Marco, Walter, Daniel, Surve, Sachin R., McIntosh, Keith Reid, Stocks, Matthew, Weber, Klaus J., Blakers, Andrew, Fong, Kean Chern
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container_title IEEE journal of photovoltaics
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creator Liang, Wensheng
Tong, Jingnan
Narangari, Parvathala
Armand, Stephane
Kho, Teng Choon
Ernst, Marco
Walter, Daniel
Surve, Sachin R.
McIntosh, Keith Reid
Stocks, Matthew
Weber, Klaus J.
Blakers, Andrew
Fong, Kean Chern
description
doi_str_mv 10.1109/JPHOTOV.2020.2982169
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title Impact of Al Doping on Surface Passivation of TiO x on Si
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