100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors

100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors

We demonstrate 100-Gbps silicon-contacted germanium waveguide p-i-n photodetectors integrated on imec's silicon photonics platform. The performance of 14 and 20 μm long devices is compared. The responsivity of the devices is 0.74 and 0.92 A/W at 1550 nm, respectively.

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Bibliographische Detailangaben
Veröffentlicht in:Journal of lightwave technology 2017-02, Vol.35 (4), p.722-726
Hauptverfasser: Hongtao Chen, Galili, M., Verheyen, P., De Heyn, P., Lepage, G., De Coster, J., Balakrishnan, S., Absil, P., Oxenlowe, L., Van Campenhout, J., Roelkens, G.
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Germanium
integrated optoelectronics
optical communications
Optical pulses
Optical waveguides
photodetectors
PIN photodiodes
Radio frequency
Silicon
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Beschreibung
Zusammenfassung:We demonstrate 100-Gbps silicon-contacted germanium waveguide p-i-n photodetectors integrated on imec's silicon photonics platform. The performance of 14 and 20 μm long devices is compared. The responsivity of the devices is 0.74 and 0.92 A/W at 1550 nm, respectively.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2016.2593942