Facet Passivation of GaAs Based LDs by N2 Plasma Pretreatment and RF Sputtered AlxNy Film Coating

RF sputtered Al x N y thin film is deposited on the cavity surface of LD (laser diode) by N 2 plasma pretreatment. Firstly optimize the preparation process of Al x N y film, and test the chemical ratio, reflectivity and optical absorption of the optimized Al x N y film by EDX, spectrophotometer and surface thermal lens technology respectively, which verify the feasibility of Al x N y used for facet coating film in LD process; then optimize the N 2 plasma cleaning process, and use PL to find out that sputtered Al x N y passivation film by N 2 plasma pretreatment can increase the GaAs surface photoluminescence efficiency by 119%. Finally, a 10 nm thick Al x N y passivation film is coated on cavity surface of LD with optimized N 2 plasma pretreatment, which leads to a higher reliability than the traditional LD.