Bipolar transistor with self-aligned lateral profile

Bipolar transistor with self-aligned lateral profile

This paper presents a new self-alignment concept for scaled-down bipolar transistors: the self-aligned lateral profile. Using this concept to form the impurity profile and combining it with a wraparound base contact to reduce the emitter-base contact spacing and an n+-poly-refractory metal emitter s...

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Veröffentlicht in:IEEE electron device letters 1987-08, Vol.8 (8), p.338-340
Hauptverfasser: Li, G.P., Tze-Chiang Chen, Ching-Te Chuang, Stork, J.M.C., Tang, D.D., Ketchen, M.B., Li-Kong Wang
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Bipolar transistors
Boron
Circuits
CMOS process
Contact resistance
Electronics
Exact sciences and technology
Implants
Impurities
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Space technology
Surface topography
Thickness control
Transistors
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Beschreibung
Zusammenfassung:This paper presents a new self-alignment concept for scaled-down bipolar transistors: the self-aligned lateral profile. Using this concept to form the impurity profile and combining it with a wraparound base contact to reduce the emitter-base contact spacing and an n+-poly-refractory metal emitter stack to reduce the emitter resistance, a high-performance and potentially high-yield device structure can be obtained. The device structure can be adapted to a CMOS or merged bipolar-CMOS process and can also be easily optimized for analog applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26652