A subthreshold current model for GaAs MESFET's

A subthreshold current model for GaAs MESFET's

A GaAs MESFET model capable of accurately describing currents in the subthreshold region is described. The model is based on the concept of drain-induced barrier lowering (DIBL) together with the reverse-bias Schottky diode conduction. Agreement between measured and calculated data based on this mod...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 1987-02, Vol.8 (2), p.69-72
Hauptverfasser: Chang, C.T.M., Vrotsos, T., Frizzell, M.T., Carroll, R.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Electrons
Exact sciences and technology
Gallium arsenide
Kelvin
Low voltage
MESFETs
Schottky barriers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SPICE
Subthreshold current
Temperature
Transistors
Tunneling
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A GaAs MESFET model capable of accurately describing currents in the subthreshold region is described. The model is based on the concept of drain-induced barrier lowering (DIBL) together with the reverse-bias Schottky diode conduction. Agreement between measured and calculated data based on this model was excellent.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26555