Planarization of gold and aluminum thin films using a pulsed laser

Planarization of gold and aluminum thin films using a pulsed laser

Micrometer-thick gold and aluminum films have been planarized by momentarily melting them with optical pulses from a dye laser. Submicrosecond pulses were used in order to minimize the temperature rise in the substrate, reduce the energy required for melting, and prevent undesirable metallurgical re...

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Veröffentlicht in:IEEE electron device letters 1986-01, Vol.7 (1), p.1-4
Hauptverfasser: Tuckerman, D.B., Weisberg, A.H.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum
Applied sciences
Electronics
Exact sciences and technology
Gold
Insulation
Integrated circuit metallization
Microelectronic fabrication (materials and surfaces technology)
Optical films
Optical pulses
Planarization
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Temperature
Transistors
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Beschreibung
Zusammenfassung:Micrometer-thick gold and aluminum films have been planarized by momentarily melting them with optical pulses from a dye laser. Submicrosecond pulses were used in order to minimize the temperature rise in the substrate, reduce the energy required for melting, and prevent undesirable metallurgical reactions. Planarization of two-level gold metallization structures insulated by SiO 2 (including interlevel vias) has been achieved. Aluminum metallization on integrated circuits (IC's) has also been planarized. The use of a thin (
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1986.26272