Geometry effects in MOSFET channel length extraction algorithms

Several techniques have been proposed to determine the channel length and series resistance of MOSFET's. Numerical simulations show that these algorithms must carefully account for two-dimensional geometry effects in order to extract parameters which are physically meaningful. New techniques wh...

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Veröffentlicht in:	IEEE electron device letters 1985-04, Vol.6 (4), p.186-188
Hauptverfasser:	Wordeman, M.R., Sun, J.Y.-C., Laux, S.E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Distortion measurement Doping Electric resistance Electrical resistance measurement Electronics Exact sciences and technology FETs Geometry Length measurement MOSFET circuits Numerical simulation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Voltage
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Beschreibung
Zusammenfassung:	Several techniques have been proposed to determine the channel length and series resistance of MOSFET's. Numerical simulations show that these algorithms must carefully account for two-dimensional geometry effects in order to extract parameters which are physically meaningful. New techniques which take these effects into account are proposed for extracting the channel length and series resistance.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/EDL.1985.26091