Experimental evidence of broad-band negative resistance characteristics of TRAPATT devices

Experimental evidence of broad-band negative resistance characteristics of TRAPATT devices

Experiments on-deeply diffused Si TRAPATT diodes have given direct evidence of small-signal negative resistance at both VHF (30-80 MHz) and at the design TRAPATT frequency of 2 GHz.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 1983-11, Vol.4 (11), p.399-402
Hauptverfasser: Kumar, K., Foulds, K.W.H.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuit optimization
Coaxial components
Diodes
Electronics
Exact sciences and technology
Frequency
Oscillators
Pulse modulation
Reflection
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Tuning
VHF circuits
Voltage
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Beschreibung
Zusammenfassung:Experiments on-deeply diffused Si TRAPATT diodes have given direct evidence of small-signal negative resistance at both VHF (30-80 MHz) and at the design TRAPATT frequency of 2 GHz.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1983.25779