MoSi 2 formation by rapid isothermal annealing
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| Veröffentlicht in: | IEEE electron device letters 1982-07, Vol.3 (7), p.179-181 |
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| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | 181 |
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| container_issue | 7 |
| container_start_page | 179 |
| container_title | IEEE electron device letters |
| container_volume | 3 |
| creator | Fulks, R.T. Powell, R.A. Stacy, W.T. |
| description | |
| doi_str_mv | 10.1109/EDL.1982.25529 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1982-07, Vol.3 (7), p.179-181 |
| issn | 0741-3106 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_EDL_1982_25529 |
| source | IEEE Electronic Library (IEL) |
| title | MoSi 2 formation by rapid isothermal annealing |
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