High resistivity interfacial layers due to compensation by Sulfur in (Al,Ga)As devices

In p-n junctions grown by LPE in the (Al,Ga)As system, high concentrations of Sulfur can accumulate on the p side of the junction. As a result, a closely compensated, high resistivity region can extend for 0.1-1.0 µm into the p layer. Since sulfur creates deep electron traps in Al 0.4 Ga 0.6 As with...

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Bibliographische Detailangaben

Veröffentlicht in:	IEEE electron device letters 1981-02, Vol.2 (2), p.46-49
Hauptverfasser:	Anthony, P.J., Schumaker, N.E., Zilko, J.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Conductivity DH-HEMTs Diodes Electron traps Helium Hydrogen P-n junctions Substrates Thermal resistance
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