Hydrogenation of transistors fabricated in polycrystalline-silicon films

Transistors have been fabricated with their active channels in thin films of polycrystalline silicon. A subsequent hydrogen plasma treatment has been used to improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects. Plasma conditions to max...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 1980-08, Vol.1 (8), p.159-161
Hauptverfasser:	Kamins, T.I., Marcoux, P.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Grain boundaries Hydrogen Plasma applications Plasma devices Plasma properties Semiconductor films Semiconductor thin films Silicon Thin film transistors Threshold voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	161
container_issue	8
container_start_page	159
container_title	IEEE electron device letters
container_volume	1
creator	Kamins, T.I. Marcoux, P.J.
description	Transistors have been fabricated with their active channels in thin films of polycrystalline silicon. A subsequent hydrogen plasma treatment has been used to improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects. Plasma conditions to maximize the hydrogenation effect have been briefly investigated.
doi_str_mv	10.1109/EDL.1980.25272
format	Article
fullrecord	<record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_EDL_1980_25272</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1481134</ieee_id><sourcerecordid>28342828</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-5e4e860aeaf3c1292bd4b5319fa449f46652bf61829fb282a887d43be8fbc1bc3</originalsourceid><addsrcrecordid>eNqNkDtPwzAURi0EEqWwsrBkYkvwM3FGVB5FqsQCs2U718jIjYvtDvn3pBSJleku53xXOghdE9wQgvu7x4dNQ3qJGypoR0_QggghayxadooWuOOkZgS35-gi50-MCecdX6D1ehpS_IBRFx_HKrqqJD1mn0tMuXLaJG91gaHyY7WLYbJpykWH4Eeosw_ezpLzYZsv0ZnTIcPV712i96fHt9W63rw-v6zuN7VlUpRaAAfZYg3aMUtoT83AjWCkd5rz3vG2FdS4lkjaO0Ml1VJ2A2cGpDOWGMuW6Pa4u0vxaw-5qK3PFkLQI8R9VlT2uGWs-wfI-PxAzmBzBG2KOSdwapf8VqdJEawOZdVcVh3Kqp-ys3BzFDwA_MFcEsI4-wY4AnWZ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28342828</pqid></control><display><type>article</type><title>Hydrogenation of transistors fabricated in polycrystalline-silicon films</title><source>IEEE Electronic Library (IEL)</source><creator>Kamins, T.I. ; Marcoux, P.J.</creator><creatorcontrib>Kamins, T.I. ; Marcoux, P.J.</creatorcontrib><description>Transistors have been fabricated with their active channels in thin films of polycrystalline silicon. A subsequent hydrogen plasma treatment has been used to improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects. Plasma conditions to maximize the hydrogenation effect have been briefly investigated.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/EDL.1980.25272</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Grain boundaries ; Hydrogen ; Plasma applications ; Plasma devices ; Plasma properties ; Semiconductor films ; Semiconductor thin films ; Silicon ; Thin film transistors ; Threshold voltage</subject><ispartof>IEEE electron device letters, 1980-08, Vol.1 (8), p.159-161</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-5e4e860aeaf3c1292bd4b5319fa449f46652bf61829fb282a887d43be8fbc1bc3</citedby><cites>FETCH-LOGICAL-c385t-5e4e860aeaf3c1292bd4b5319fa449f46652bf61829fb282a887d43be8fbc1bc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1481134$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,778,782,794,27911,27912,54745</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1481134$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kamins, T.I.</creatorcontrib><creatorcontrib>Marcoux, P.J.</creatorcontrib><title>Hydrogenation of transistors fabricated in polycrystalline-silicon films</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Transistors have been fabricated with their active channels in thin films of polycrystalline silicon. A subsequent hydrogen plasma treatment has been used to improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects. Plasma conditions to maximize the hydrogenation effect have been briefly investigated.</description><subject>Grain boundaries</subject><subject>Hydrogen</subject><subject>Plasma applications</subject><subject>Plasma devices</subject><subject>Plasma properties</subject><subject>Semiconductor films</subject><subject>Semiconductor thin films</subject><subject>Silicon</subject><subject>Thin film transistors</subject><subject>Threshold voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1980</creationdate><recordtype>article</recordtype><recordid>eNqNkDtPwzAURi0EEqWwsrBkYkvwM3FGVB5FqsQCs2U718jIjYvtDvn3pBSJleku53xXOghdE9wQgvu7x4dNQ3qJGypoR0_QggghayxadooWuOOkZgS35-gi50-MCecdX6D1ehpS_IBRFx_HKrqqJD1mn0tMuXLaJG91gaHyY7WLYbJpykWH4Eeosw_ezpLzYZsv0ZnTIcPV712i96fHt9W63rw-v6zuN7VlUpRaAAfZYg3aMUtoT83AjWCkd5rz3vG2FdS4lkjaO0Ml1VJ2A2cGpDOWGMuW6Pa4u0vxaw-5qK3PFkLQI8R9VlT2uGWs-wfI-PxAzmBzBG2KOSdwapf8VqdJEawOZdVcVh3Kqp-ys3BzFDwA_MFcEsI4-wY4AnWZ</recordid><startdate>19800801</startdate><enddate>19800801</enddate><creator>Kamins, T.I.</creator><creator>Marcoux, P.J.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19800801</creationdate><title>Hydrogenation of transistors fabricated in polycrystalline-silicon films</title><author>Kamins, T.I. ; Marcoux, P.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-5e4e860aeaf3c1292bd4b5319fa449f46652bf61829fb282a887d43be8fbc1bc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1980</creationdate><topic>Grain boundaries</topic><topic>Hydrogen</topic><topic>Plasma applications</topic><topic>Plasma devices</topic><topic>Plasma properties</topic><topic>Semiconductor films</topic><topic>Semiconductor thin films</topic><topic>Silicon</topic><topic>Thin film transistors</topic><topic>Threshold voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kamins, T.I.</creatorcontrib><creatorcontrib>Marcoux, P.J.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kamins, T.I.</au><au>Marcoux, P.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hydrogenation of transistors fabricated in polycrystalline-silicon films</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1980-08-01</date><risdate>1980</risdate><volume>1</volume><issue>8</issue><spage>159</spage><epage>161</epage><pages>159-161</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Transistors have been fabricated with their active channels in thin films of polycrystalline silicon. A subsequent hydrogen plasma treatment has been used to improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects. Plasma conditions to maximize the hydrogenation effect have been briefly investigated.</abstract><pub>IEEE</pub><doi>10.1109/EDL.1980.25272</doi><tpages>3</tpages></addata></record>
fulltext	fulltext_linktorsrc
identifier	ISSN: 0741-3106
ispartof	IEEE electron device letters, 1980-08, Vol.1 (8), p.159-161
issn	0741-3106 1558-0563
language	eng
recordid	cdi_crossref_primary_10_1109_EDL_1980_25272
source	IEEE Electronic Library (IEL)
subjects	Grain boundaries Hydrogen Plasma applications Plasma devices Plasma properties Semiconductor films Semiconductor thin films Silicon Thin film transistors Threshold voltage
title	Hydrogenation of transistors fabricated in polycrystalline-silicon films
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T18%3A08%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Hydrogenation%20of%20transistors%20fabricated%20in%20polycrystalline-silicon%20films&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Kamins,%20T.I.&rft.date=1980-08-01&rft.volume=1&rft.issue=8&rft.spage=159&rft.epage=161&rft.pages=159-161&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/EDL.1980.25272&rft_dat=%3Cproquest_RIE%3E28342828%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28342828&rft_id=info:pmid/&rft_ieee_id=1481134&rfr_iscdi=true