Hydrogenation of transistors fabricated in polycrystalline-silicon films

Hydrogenation of transistors fabricated in polycrystalline-silicon films

Transistors have been fabricated with their active channels in thin films of polycrystalline silicon. A subsequent hydrogen plasma treatment has been used to improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects. Plasma conditions to max...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 1980-08, Vol.1 (8), p.159-161
Hauptverfasser: Kamins, T.I., Marcoux, P.J.
Format: Artikel
Sprache:eng
Schlagworte:
Grain boundaries
Hydrogen
Plasma applications
Plasma devices
Plasma properties
Semiconductor films
Semiconductor thin films
Silicon
Thin film transistors
Threshold voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Transistors have been fabricated with their active channels in thin films of polycrystalline silicon. A subsequent hydrogen plasma treatment has been used to improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects. Plasma conditions to maximize the hydrogenation effect have been briefly investigated.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1980.25272