O 2 Plasma Alternately Treated ALD-Al 2 O 3 as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

O 2 Plasma Alternately Treated ALD-Al 2 O 3 as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

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Veröffentlicht in:IEEE access 2024, Vol.12, p.16089-16094
Hauptverfasser: Wang, Qiang, Pan, Maolin, Zhang, Penghao, Wang, Luyu, Yang, Yannan, Xie, Xinling, Huang, Hai, Hu, Xin, Xu, Min
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container_end_page 16094
container_issue
container_start_page 16089
container_title IEEE access
container_volume 12
creator Wang, Qiang
Pan, Maolin
Zhang, Penghao
Wang, Luyu
Yang, Yannan
Xie, Xinling
Huang, Hai
Hu, Xin
Xu, Min
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doi_str_mv 10.1109/ACCESS.2023.3347810
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title O 2 Plasma Alternately Treated ALD-Al 2 O 3 as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs
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