Quantitative Hot Carrier Injection Analysis of N-Type Tunnel Field-Effect Transistors
The hot carrier injection (HCI) of tunnel field-effect transistors (TFETs) is analyzed quantitatively under various conditions in terms of HCI-induced gate current ( I G ), HCI probability ( I G / I D ), potential energy, and lateral/vertical electric field for the first time. For example, the I G a...
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| creator | Woo, Jae Seung Lee, Jang Woo Choi, Woo Young |
| description | The hot carrier injection (HCI) of tunnel field-effect transistors (TFETs) is analyzed quantitatively under various conditions in terms of HCI-induced gate current ( I G ), HCI probability ( I G / I D ), potential energy, and lateral/vertical electric field for the first time. For example, the I G and I G / I D of TFETs are predicted in comparison with those of metal-oxide semiconductor FETs (MOSFETs) with the variation of gate voltage ( V G ), drain voltage ( V D ), gate insulator thickness ( T ins ), and channel length ( L ch ). According to the simulation results, TFETs show higher HCI probability than MOSFETs under the entire bias conditions because the former features strong peak lateral field at source-channel junction. For example, TFETs show ~1.8×10 2 x higher HCI current and ~5.9×10 6 x higher HCI probability than MOSFETs at V G = 4 V and V D = 3 V. The optimal HCI bias condition of TFETs is also analyzed. |
| doi_str_mv | 10.1109/ACCESS.2023.3243578 |
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For example, the I G and I G / I D of TFETs are predicted in comparison with those of metal-oxide semiconductor FETs (MOSFETs) with the variation of gate voltage ( V G ), drain voltage ( V D ), gate insulator thickness ( T ins ), and channel length ( L ch ). According to the simulation results, TFETs show higher HCI probability than MOSFETs under the entire bias conditions because the former features strong peak lateral field at source-channel junction. For example, TFETs show ~1.8×10 2 x higher HCI current and ~5.9×10 6 x higher HCI probability than MOSFETs at V G = 4 V and V D = 3 V. The optimal HCI bias condition of TFETs is also analyzed.</description><identifier>ISSN: 2169-3536</identifier><identifier>EISSN: 2169-3536</identifier><identifier>DOI: 10.1109/ACCESS.2023.3243578</identifier><identifier>CODEN: IAECCG</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Analytical models ; Bias ; Carrier injection ; Electric fields ; Electric potential ; Field effect transistors ; hot carrier injection ; Human computer interaction ; Junctions ; Logic gates ; Metal oxide semiconductors ; metal-oxide field-effect transistors (MOSFETs) ; MOSFET ; MOSFETs ; Potential energy ; Semiconductor devices ; TFETs ; Transistors ; Tunnel field-effect transistors (TFETs) ; Tunnels ; Voltage</subject><ispartof>IEEE access, 2023, Vol.11, p.1-1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3248-f45a8e923c68cd701712217aef9a9efbfa4d4bae36fc053a2050459411f718cb3</citedby><cites>FETCH-LOGICAL-c3248-f45a8e923c68cd701712217aef9a9efbfa4d4bae36fc053a2050459411f718cb3</cites><orcidid>0000-0002-5515-2912 ; 0000-0003-4781-4979 ; 0000-0002-7369-2357</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10041127$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>315,781,785,865,2103,4025,27638,27928,27929,27930,54938</link.rule.ids></links><search><creatorcontrib>Woo, Jae Seung</creatorcontrib><creatorcontrib>Lee, Jang Woo</creatorcontrib><creatorcontrib>Choi, Woo Young</creatorcontrib><title>Quantitative Hot Carrier Injection Analysis of N-Type Tunnel Field-Effect Transistors</title><title>IEEE access</title><addtitle>Access</addtitle><description>The hot carrier injection (HCI) of tunnel field-effect transistors (TFETs) is analyzed quantitatively under various conditions in terms of HCI-induced gate current ( I G ), HCI probability ( I G / I D ), potential energy, and lateral/vertical electric field for the first time. For example, the I G and I G / I D of TFETs are predicted in comparison with those of metal-oxide semiconductor FETs (MOSFETs) with the variation of gate voltage ( V G ), drain voltage ( V D ), gate insulator thickness ( T ins ), and channel length ( L ch ). According to the simulation results, TFETs show higher HCI probability than MOSFETs under the entire bias conditions because the former features strong peak lateral field at source-channel junction. For example, TFETs show ~1.8×10 2 x higher HCI current and ~5.9×10 6 x higher HCI probability than MOSFETs at V G = 4 V and V D = 3 V. The optimal HCI bias condition of TFETs is also analyzed.</description><subject>Analytical models</subject><subject>Bias</subject><subject>Carrier injection</subject><subject>Electric fields</subject><subject>Electric potential</subject><subject>Field effect transistors</subject><subject>hot carrier injection</subject><subject>Human computer interaction</subject><subject>Junctions</subject><subject>Logic gates</subject><subject>Metal oxide semiconductors</subject><subject>metal-oxide field-effect transistors (MOSFETs)</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Potential energy</subject><subject>Semiconductor devices</subject><subject>TFETs</subject><subject>Transistors</subject><subject>Tunnel field-effect transistors (TFETs)</subject><subject>Tunnels</subject><subject>Voltage</subject><issn>2169-3536</issn><issn>2169-3536</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpNUU1LJDEQDaKgjP6C3UNgzz3ms9N9HJpRB2RFHM-hJl2RDG1nNulZmH-_0ZbFulRRvPfq4xHyg7Ml56y9XXXd-uVlKZiQSymU1KY5I1eC120ltazPv9WX5CbnPSvRlJY2V-T1-QjjFCaYwl-kD3GiHaQUMNHNuEc3hTjS1QjDKYdMo6e_q-3pgHR7HEcc6F3Aoa_W3hck3SYYC2qKKV-TCw9DxpuvvCCvd-tt91A9Pt1vutVj5cqiTeWVhgZbIV3duN4wbrgQ3AD6Flr0Ow-qVztAWXvHtATBNFO6VZx7wxu3kwuymXX7CHt7SOEd0slGCPazEdObhTQFN6CF3nFV93WZB8pIB16Z1nvPenRaeyxav2atQ4p_jpgnu4_HVE7PVhhjdMPa8sIFkTPKpZhzQv9_Kmf2ww4722E_7LBfdhTWz5kVEPEbg5VThJH_AAz0hoQ</recordid><startdate>2023</startdate><enddate>2023</enddate><creator>Woo, Jae Seung</creator><creator>Lee, Jang Woo</creator><creator>Choi, Woo Young</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-5515-2912</orcidid><orcidid>https://orcid.org/0000-0003-4781-4979</orcidid><orcidid>https://orcid.org/0000-0002-7369-2357</orcidid></search><sort><creationdate>2023</creationdate><title>Quantitative Hot Carrier Injection Analysis of N-Type Tunnel Field-Effect Transistors</title><author>Woo, Jae Seung ; Lee, Jang Woo ; Choi, Woo Young</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3248-f45a8e923c68cd701712217aef9a9efbfa4d4bae36fc053a2050459411f718cb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Analytical models</topic><topic>Bias</topic><topic>Carrier injection</topic><topic>Electric fields</topic><topic>Electric potential</topic><topic>Field effect transistors</topic><topic>hot carrier injection</topic><topic>Human computer interaction</topic><topic>Junctions</topic><topic>Logic gates</topic><topic>Metal oxide semiconductors</topic><topic>metal-oxide field-effect transistors (MOSFETs)</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Potential energy</topic><topic>Semiconductor devices</topic><topic>TFETs</topic><topic>Transistors</topic><topic>Tunnel field-effect transistors (TFETs)</topic><topic>Tunnels</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Woo, Jae Seung</creatorcontrib><creatorcontrib>Lee, Jang Woo</creatorcontrib><creatorcontrib>Choi, Woo Young</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>IEEE access</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Woo, Jae Seung</au><au>Lee, Jang Woo</au><au>Choi, Woo Young</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quantitative Hot Carrier Injection Analysis of N-Type Tunnel Field-Effect Transistors</atitle><jtitle>IEEE access</jtitle><stitle>Access</stitle><date>2023</date><risdate>2023</risdate><volume>11</volume><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>2169-3536</issn><eissn>2169-3536</eissn><coden>IAECCG</coden><abstract>The hot carrier injection (HCI) of tunnel field-effect transistors (TFETs) is analyzed quantitatively under various conditions in terms of HCI-induced gate current ( I G ), HCI probability ( I G / I D ), potential energy, and lateral/vertical electric field for the first time. For example, the I G and I G / I D of TFETs are predicted in comparison with those of metal-oxide semiconductor FETs (MOSFETs) with the variation of gate voltage ( V G ), drain voltage ( V D ), gate insulator thickness ( T ins ), and channel length ( L ch ). According to the simulation results, TFETs show higher HCI probability than MOSFETs under the entire bias conditions because the former features strong peak lateral field at source-channel junction. For example, TFETs show ~1.8×10 2 x higher HCI current and ~5.9×10 6 x higher HCI probability than MOSFETs at V G = 4 V and V D = 3 V. The optimal HCI bias condition of TFETs is also analyzed.</abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/ACCESS.2023.3243578</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0002-5515-2912</orcidid><orcidid>https://orcid.org/0000-0003-4781-4979</orcidid><orcidid>https://orcid.org/0000-0002-7369-2357</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Analytical models Bias Carrier injection Electric fields Electric potential Field effect transistors hot carrier injection Human computer interaction Junctions Logic gates Metal oxide semiconductors metal-oxide field-effect transistors (MOSFETs) MOSFET MOSFETs Potential energy Semiconductor devices TFETs Transistors Tunnel field-effect transistors (TFETs) Tunnels Voltage |
| title | Quantitative Hot Carrier Injection Analysis of N-Type Tunnel Field-Effect Transistors |
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