Quantitative Hot Carrier Injection Analysis of N-Type Tunnel Field-Effect Transistors

The hot carrier injection (HCI) of tunnel field-effect transistors (TFETs) is analyzed quantitatively under various conditions in terms of HCI-induced gate current ( I G ), HCI probability ( I G / I D ), potential energy, and lateral/vertical electric field for the first time. For example, the I G and I G / I D of TFETs are predicted in comparison with those of metal-oxide semiconductor FETs (MOSFETs) with the variation of gate voltage ( V G ), drain voltage ( V D ), gate insulator thickness ( T ins ), and channel length ( L ch ). According to the simulation results, TFETs show higher HCI probability than MOSFETs under the entire bias conditions because the former features strong peak lateral field at source-channel junction. For example, TFETs show ~1.8×10 2 x higher HCI current and ~5.9×10 6 x higher HCI probability than MOSFETs at V G = 4 V and V D = 3 V. The optimal HCI bias condition of TFETs is also analyzed.