A 2.4-GHz silicon-on-sapphire CMOS low-noise amplifier

A low-noise amplifier operating at 2.4 GHz has been fabricated with MOSFETs in silicon-on-sapphire technology. The amplifier has a 2.8-dB noise figure, 10-dB gain, and 14-dBm output referred IP3 with 14-mW power dissipation. The amplifier was matched for minimum noise with on-chip spiral inductors a...

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Veröffentlicht in:	IEEE microwave and guided wave letters 1997-10, Vol.7 (10), p.350-352
Hauptverfasser:	Johnson, R.A., Chang, C.E., de la Houssaye, P.R., Wood, M.E., Garcia, G.A., Asbeck, P.M., Lagnado, I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit noise Circuit properties Circuit simulation CMOS technology Electric, optical and optoelectronic circuits Electronics Exact sciences and technology FETs Low-noise amplifiers Microwave circuits Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Noise figure Optical amplifiers Power dissipation Spirals
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Beschreibung
Zusammenfassung:	A low-noise amplifier operating at 2.4 GHz has been fabricated with MOSFETs in silicon-on-sapphire technology. The amplifier has a 2.8-dB noise figure, 10-dB gain, and 14-dBm output referred IP3 with 14-mW power dissipation. The amplifier was matched for minimum noise with on-chip spiral inductors and capacitors.
ISSN:	1051-8207 1558-2329
DOI:	10.1109/75.631198