A design approach for mass producible high-bit-rate MMIC transimpedance amplifiers

A full design approach for developing very highspeed transimpedance amplifier (TIA) monolithic microwave integrated circuits (MMICs) to be economically produced in large quantities is described. As an application example, the letter reports design, experimental performances, yield, and size data for...

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Veröffentlicht in:	IEEE microwave and guided wave letters 1997-10, Vol.7 (10), p.317-319
Hauptverfasser:	Bastida, E.M., Corso, V., Finardi, C.A., Fischer, R.A., Patiri, V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Field effect MMICs Gallium arsenide Integrated circuit technology Integrated circuit yield Microwave amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwave FET integrated circuits Microwave FETs Microwave integrated circuits Monolithic integrated circuits Optimized production technology Theoretical study. Circuits analysis and design
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Beschreibung
Zusammenfassung:	A full design approach for developing very highspeed transimpedance amplifier (TIA) monolithic microwave integrated circuits (MMICs) to be economically produced in large quantities is described. As an application example, the letter reports design, experimental performances, yield, and size data for a 5-Gb/s MMIC TIA using a low-cost 0.5-μm GaAs field-effect transistor (FET) technology, showing outstanding experimental performances and optimized for a large-volume industrial production.
ISSN:	1051-8207 1558-2329
DOI:	10.1109/75.631187