Millimeter-wave power performance of ion-implanted In/sub x/Ga/sub (1-x)/As on GaAs metal semiconductor field-effect transistors
Millimeter-wave power performance achieved by ion-implanted InGaAs-GaAs MESFETs with a gate length of 0.25 mu m is described. When a device with a gate width of 150 mu m was measured at 22 GHz, an output power of 95 mW, a power-added efficiency of 33%, and an associated gain of 7.3 dB were observed....
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Veröffentlicht in: | IEEE microwave and guided wave letters 1992-06, Vol.2 (6), p.225-227 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Millimeter-wave power performance achieved by ion-implanted InGaAs-GaAs MESFETs with a gate length of 0.25 mu m is described. When a device with a gate width of 150 mu m was measured at 22 GHz, an output power of 95 mW, a power-added efficiency of 33%, and an associated gain of 7.3 dB were observed. At an output power of 93 mW, a power-added efficiency of 25% and an associated gain of 4 dB were obtained at 44 GHz. When a device with a gate width of 200 mu m was measured at 60 GHz, an output power of 121 mW with 3-dB associated gain and 13% power-added efficiency were observed.< > |
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ISSN: | 1051-8207 1558-2329 |
DOI: | 10.1109/75.136513 |