164-GHz MMIC HEMT doubler

In this paper, a MMIC frequency doubler based on an InP HEMT and grounded CPW (GCPW) technology is reported. The doubler demonstrated a conversion loss of only 2 dB and output power of 5 dBm at 164 GHz. The 3 dB output power bandwidth is 14 GHz, or 8.5%. This is the best reported result for a MMIC H...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2001-06, Vol.11 (6), p.241-243
Hauptverfasser:	Radisic, V., Micovic, M., Hu, M., Janke, P., Ngo, C., Nguyen, L., Samoska, L., Morgan, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bandwidth Circuit properties Conversion Coplanar waveguides Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Frequency conversion Frequency doublers HEMTs High electron mobility transistors Indium phosphide Indium phosphides Laboratories Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves MMICs Noise levels Power generation Propulsion Schottky diodes Semiconductor device modeling Semiconductor devices
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Beschreibung
Zusammenfassung:	In this paper, a MMIC frequency doubler based on an InP HEMT and grounded CPW (GCPW) technology is reported. The doubler demonstrated a conversion loss of only 2 dB and output power of 5 dBm at 164 GHz. The 3 dB output power bandwidth is 14 GHz, or 8.5%. This is the best reported result for a MMIC HEMT doubler above 100 GHz.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/7260.928925