Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz

An In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As waveguide avalanche photodiode with a record gain-bandwidth product of over 320 GHz has been demonstrated. A bandwidth of 28 GHz was achieved at low gains with low excess noise and a quantum efficiency of 16% at 1.55 μm.

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE photonics technology letters 2001-08, Vol.13 (8), p.842-844
Hauptverfasser:	Kinsey, G.S., Campbell, J.C., Dentai, A.G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Avalanche photodiodes Avalanches Bandwidth Contacts Gain Indium phosphide Noise Optical fiber devices Optical noise Optical receivers Optical waveguides Parasitic capacitance Photodiodes Photonics Quantum efficiency Waveguides
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