Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz

Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz

An In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As waveguide avalanche photodiode with a record gain-bandwidth product of over 320 GHz has been demonstrated. A bandwidth of 28 GHz was achieved at low gains with low excess noise and a quantum efficiency of 16% at 1.55 μm.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 2001-08, Vol.13 (8), p.842-844
Hauptverfasser: Kinsey, G.S., Campbell, J.C., Dentai, A.G.
Format: Artikel
Sprache:eng
Schlagworte:
Absorption
Avalanche photodiodes
Avalanches
Bandwidth
Contacts
Gain
Indium phosphide
Noise
Optical fiber devices
Optical noise
Optical receivers
Optical waveguides
Parasitic capacitance
Photodiodes
Photonics
Quantum efficiency
Waveguides
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Beschreibung
Zusammenfassung:An In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As waveguide avalanche photodiode with a record gain-bandwidth product of over 320 GHz has been demonstrated. A bandwidth of 28 GHz was achieved at low gains with low excess noise and a quantum efficiency of 16% at 1.55 μm.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.935822