Monolithic integration of 1.3-/spl mu/m Stark-ladder electroabsorption waveguide modulators with multimode-interference splitters

In this letter, we describe a novel fabrication process for the monolithic integration of a waveguide power splitter based on the multimode-interference effect with multiple-quantum well (MQW) electroabsorption modulators based on the Stark-ladder effect. The integrated device is fabricated by a one...

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Veröffentlicht in:IEEE photonics technology letters 2000-06, Vol.12 (6), p.657-659
Hauptverfasser: Harrison, L.J., Tayag, T.J., Simonis, G.J., Stead, M., Euliss, G.W., Leavitt, R.P.
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Sprache:eng
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Zusammenfassung:In this letter, we describe a novel fabrication process for the monolithic integration of a waveguide power splitter based on the multimode-interference effect with multiple-quantum well (MQW) electroabsorption modulators based on the Stark-ladder effect. The integrated device is fabricated by a one-step epitaxy process using molecular-beam-epitaxy growth and three lithographic steps that eliminates the need for aligned regrowth of the MQW modulator. Experimental results of the modulation depth and wavelength dependence are also reported.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.849075