Fabrication and analysis of high-contrast InGaAsP-InP Mach-Zehnder modulators for use at 1.55-μm wavelength

A high-contrast ratio, low voltage-length product, multiple quantum well InGaAsP-InP Mach-Zehnder interferometer is demonstrated and analyzed. An on/off ratio of over 40 dB and voltage-length product of 1.8 V-mm were measured, results which are superior to previous reports of similar MQW structures....

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Veröffentlicht in:IEEE photonics technology letters 1996-01, Vol.8 (1), p.69-71
Hauptverfasser: Fetterman, M., Chao, C.-P., Forrest, S.R.
Format: Artikel
Sprache:eng
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Zusammenfassung:A high-contrast ratio, low voltage-length product, multiple quantum well InGaAsP-InP Mach-Zehnder interferometer is demonstrated and analyzed. An on/off ratio of over 40 dB and voltage-length product of 1.8 V-mm were measured, results which are superior to previous reports of similar MQW structures. Using the Lanczos-Helmholtz beam propagation method, we find that the linear and quadratic electrooptic coefficients for InGaAsP quantum wells are r=(3.9/spl plusmn/1.7) pm/V and s=(5.0/spl plusmn/1.5)/spl times/10/sup -19/ m/sup 2//V/sup 2/, respectively. We also demonstrate active optical alignment of the modulator guides using integrated waveguide light emitting diodes.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.475781