Gain nonlinearity and its temperature dependence in bulk- and quantum-well quaternary lasers

Spectrally resolved measurements of unclamped spontaneous emission above threshold in 1.3 μm InGaAsP bulk double heterostructure and compressively strained multiquantum-well lasers are analyzed using steady state rate equations. Both types of structures are characterized by nonlinear gain coefficien...

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Veröffentlicht in:	IEEE photonics technology letters 1995-04, Vol.7 (4), p.348-350
Hauptverfasser:	Bermussi, A.A., Temkin, H., Coblentz, D.L., Logan, R.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Carrier confinement Electronics Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Nonlinear equations Nonlinear optics Optics Optoelectronic devices Physics Quantum well devices Quantum well lasers Radiative recombination Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor lasers laser diodes Spontaneous emission Steady-state Stimulated emission Temperature dependence
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Zusammenfassung:	Spectrally resolved measurements of unclamped spontaneous emission above threshold in 1.3 μm InGaAsP bulk double heterostructure and compressively strained multiquantum-well lasers are analyzed using steady state rate equations. Both types of structures are characterized by nonlinear gain coefficients in the range of (2.7-3.0)×10/sup -17/ cm 3 at 20/spl deg/C. The nonlinear gain coefficient decreases with increasing temperature due to thermionic emission of carriers out of the active region and decreasing differential gain. The former effect was found to be more pronounced in quantum-well lasers. Excellent agreement with the rate equation based model is obtained.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/68.376798