Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-μm laser

We present the technical approach and the preliminary device results on the first integration of a Wannier Stark (WS) electroabsorption (EA) modulator with a DFB laser on InP. The WS modulator active layer consists of a lattice matched InGaAs-InAlAs superlattice (SL) grown by solid source MBE. It is...

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Veröffentlicht in:	IEEE photonics technology letters 1995-02, Vol.7 (2), p.185-187
Hauptverfasser:	Allovon, M., Fouchet, S., Harmand, J.-C., Ougazzaden, A., Rose, B., Gloukhian, A., Devaux, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bandwidth Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Frequency measurement Indium phosphide Integrated optoelectronics. Optoelectronic circuits Lattices Monolithic integrated circuits Optical and optoelectronic circuits Performance evaluation Quantum well devices Signal analysis Solids Superlattices
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Beschreibung
Zusammenfassung:	We present the technical approach and the preliminary device results on the first integration of a Wannier Stark (WS) electroabsorption (EA) modulator with a DFB laser on InP. The WS modulator active layer consists of a lattice matched InGaAs-InAlAs superlattice (SL) grown by solid source MBE. It is butt-coupled to a laser grown by AP-MOVPE whose active layer includes a strained InGaAsP-InGaAsP MQW stack. Device results cover static performances of integrated lasers and modulators, and measurements of high frequency characteristics (small signal bandwidth and 10 Gb/s eye diagram).< >
ISSN:	1041-1135 1941-0174
DOI:	10.1109/68.345917