Noise performance of separate absorption, grading, charge and multiplication InP/InGaAs avalanche photodiodes
The noise performance of planar separate absorption, grading, charge and multiplication avalanche photodiodes was investigated at room temperature over a range of integrated charge (2.7-3.3×10/sup 12/ cm/sup -2/) and high field InP thickness (0.09-0.62 μm). It is found that the effective k of 0.38 i...
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| Veröffentlicht in: | IEEE photonics technology letters 1994-05, Vol.6 (5), p.632-634 |
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| container_title | IEEE photonics technology letters |
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| creator | Yu, J. Tarof, L.E. Bruce, R. Knight, D.G. Visvanatha, K. Baird, T. |
| description | The noise performance of planar separate absorption, grading, charge and multiplication avalanche photodiodes was investigated at room temperature over a range of integrated charge (2.7-3.3×10/sup 12/ cm/sup -2/) and high field InP thickness (0.09-0.62 μm). It is found that the effective k of 0.38 is nearly independent of these parameters. These observations are consistent with ionization both inside and outside the high-field InP region. Furthermore, the temperature dependence was investigated, with the result that k increases slightly from 0.42 to 0.53 with increasing temperature in the range -30 to +85/spl deg/C. |
| doi_str_mv | 10.1109/68.285563 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_68_285563</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>285563</ieee_id><sourcerecordid>26506014</sourcerecordid><originalsourceid>FETCH-LOGICAL-c337t-750ae61a02d5fb9b8f3287341db1dabdb11062cc3ceb8dc84621021fc6b4df653</originalsourceid><addsrcrecordid>eNqFkE1Lw0AQhoMoWKsHr572IILQj53sZpscS9FaKOpBz2GyH-1Kko27qeC_d0tLr15mBuaZh-FNklugEwBaTEU-SfMsE-wsGUDBYUxhxs_jTOMMwLLL5CqEL0qBZ4wPkubV2aBJp71xvsFWauIMCbpDj70mWAXnu966dkQ2HpVtNyMit-g3cdcq0uzq3na1lbhnyKp9n67aJc4DwR-so24b3VvXO2Wd0uE6uTBYB31z7MPk8_npY_EyXr8tV4v5eiwZm_XjWUZRC0CaqsxURZUbluYzxkFVoLCKFahIpWRSV7mSORcp0BSMFBVXRmRsmDwcvJ133zsd-rKxQeo6fqTdLpRpznnBoPgfFBkVMasIPh5A6V0IXpuy87ZB_1sCLffJlyIvD8lH9v4oxSCxNj7mYMPpgAMXlO-fvDtgVmt92h4dfwH7i9A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26506014</pqid></control><display><type>article</type><title>Noise performance of separate absorption, grading, charge and multiplication InP/InGaAs avalanche photodiodes</title><source>IEEE Electronic Library (IEL)</source><creator>Yu, J. ; Tarof, L.E. ; Bruce, R. ; Knight, D.G. ; Visvanatha, K. ; Baird, T.</creator><creatorcontrib>Yu, J. ; Tarof, L.E. ; Bruce, R. ; Knight, D.G. ; Visvanatha, K. ; Baird, T.</creatorcontrib><description>The noise performance of planar separate absorption, grading, charge and multiplication avalanche photodiodes was investigated at room temperature over a range of integrated charge (2.7-3.3×10/sup 12/ cm/sup -2/) and high field InP thickness (0.09-0.62 μm). It is found that the effective k of 0.38 is nearly independent of these parameters. These observations are consistent with ionization both inside and outside the high-field InP region. Furthermore, the temperature dependence was investigated, with the result that k increases slightly from 0.42 to 0.53 with increasing temperature in the range -30 to +85/spl deg/C.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.285563</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Absorption ; Applied sciences ; Avalanche photodiodes ; Electronics ; Exact sciences and technology ; Fabrication ; Indium gallium arsenide ; Indium phosphide ; Integrated circuit noise ; Ionization ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Temperature dependence ; Temperature distribution ; Voltage</subject><ispartof>IEEE photonics technology letters, 1994-05, Vol.6 (5), p.632-634</ispartof><rights>1994 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-750ae61a02d5fb9b8f3287341db1dabdb11062cc3ceb8dc84621021fc6b4df653</citedby><cites>FETCH-LOGICAL-c337t-750ae61a02d5fb9b8f3287341db1dabdb11062cc3ceb8dc84621021fc6b4df653</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/285563$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,778,782,794,27911,27912,54745</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/285563$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4146045$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Yu, J.</creatorcontrib><creatorcontrib>Tarof, L.E.</creatorcontrib><creatorcontrib>Bruce, R.</creatorcontrib><creatorcontrib>Knight, D.G.</creatorcontrib><creatorcontrib>Visvanatha, K.</creatorcontrib><creatorcontrib>Baird, T.</creatorcontrib><title>Noise performance of separate absorption, grading, charge and multiplication InP/InGaAs avalanche photodiodes</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>The noise performance of planar separate absorption, grading, charge and multiplication avalanche photodiodes was investigated at room temperature over a range of integrated charge (2.7-3.3×10/sup 12/ cm/sup -2/) and high field InP thickness (0.09-0.62 μm). It is found that the effective k of 0.38 is nearly independent of these parameters. These observations are consistent with ionization both inside and outside the high-field InP region. Furthermore, the temperature dependence was investigated, with the result that k increases slightly from 0.42 to 0.53 with increasing temperature in the range -30 to +85/spl deg/C.</description><subject>Absorption</subject><subject>Applied sciences</subject><subject>Avalanche photodiodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>Integrated circuit noise</subject><subject>Ionization</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Temperature dependence</subject><subject>Temperature distribution</subject><subject>Voltage</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqFkE1Lw0AQhoMoWKsHr572IILQj53sZpscS9FaKOpBz2GyH-1Kko27qeC_d0tLr15mBuaZh-FNklugEwBaTEU-SfMsE-wsGUDBYUxhxs_jTOMMwLLL5CqEL0qBZ4wPkubV2aBJp71xvsFWauIMCbpDj70mWAXnu966dkQ2HpVtNyMit-g3cdcq0uzq3na1lbhnyKp9n67aJc4DwR-so24b3VvXO2Wd0uE6uTBYB31z7MPk8_npY_EyXr8tV4v5eiwZm_XjWUZRC0CaqsxURZUbluYzxkFVoLCKFahIpWRSV7mSORcp0BSMFBVXRmRsmDwcvJ133zsd-rKxQeo6fqTdLpRpznnBoPgfFBkVMasIPh5A6V0IXpuy87ZB_1sCLffJlyIvD8lH9v4oxSCxNj7mYMPpgAMXlO-fvDtgVmt92h4dfwH7i9A</recordid><startdate>19940501</startdate><enddate>19940501</enddate><creator>Yu, J.</creator><creator>Tarof, L.E.</creator><creator>Bruce, R.</creator><creator>Knight, D.G.</creator><creator>Visvanatha, K.</creator><creator>Baird, T.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19940501</creationdate><title>Noise performance of separate absorption, grading, charge and multiplication InP/InGaAs avalanche photodiodes</title><author>Yu, J. ; Tarof, L.E. ; Bruce, R. ; Knight, D.G. ; Visvanatha, K. ; Baird, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-750ae61a02d5fb9b8f3287341db1dabdb11062cc3ceb8dc84621021fc6b4df653</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Absorption</topic><topic>Applied sciences</topic><topic>Avalanche photodiodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Indium gallium arsenide</topic><topic>Indium phosphide</topic><topic>Integrated circuit noise</topic><topic>Ionization</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Temperature dependence</topic><topic>Temperature distribution</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Yu, J.</creatorcontrib><creatorcontrib>Tarof, L.E.</creatorcontrib><creatorcontrib>Bruce, R.</creatorcontrib><creatorcontrib>Knight, D.G.</creatorcontrib><creatorcontrib>Visvanatha, K.</creatorcontrib><creatorcontrib>Baird, T.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yu, J.</au><au>Tarof, L.E.</au><au>Bruce, R.</au><au>Knight, D.G.</au><au>Visvanatha, K.</au><au>Baird, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Noise performance of separate absorption, grading, charge and multiplication InP/InGaAs avalanche photodiodes</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>1994-05-01</date><risdate>1994</risdate><volume>6</volume><issue>5</issue><spage>632</spage><epage>634</epage><pages>632-634</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>The noise performance of planar separate absorption, grading, charge and multiplication avalanche photodiodes was investigated at room temperature over a range of integrated charge (2.7-3.3×10/sup 12/ cm/sup -2/) and high field InP thickness (0.09-0.62 μm). It is found that the effective k of 0.38 is nearly independent of these parameters. These observations are consistent with ionization both inside and outside the high-field InP region. Furthermore, the temperature dependence was investigated, with the result that k increases slightly from 0.42 to 0.53 with increasing temperature in the range -30 to +85/spl deg/C.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/68.285563</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 1994-05, Vol.6 (5), p.632-634 |
| issn | 1041-1135 1941-0174 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Absorption Applied sciences Avalanche photodiodes Electronics Exact sciences and technology Fabrication Indium gallium arsenide Indium phosphide Integrated circuit noise Ionization Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature dependence Temperature distribution Voltage |
| title | Noise performance of separate absorption, grading, charge and multiplication InP/InGaAs avalanche photodiodes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T16%3A58%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Noise%20performance%20of%20separate%20absorption,%20grading,%20charge%20and%20multiplication%20InP/InGaAs%20avalanche%20photodiodes&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Yu,%20J.&rft.date=1994-05-01&rft.volume=6&rft.issue=5&rft.spage=632&rft.epage=634&rft.pages=632-634&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/68.285563&rft_dat=%3Cproquest_RIE%3E26506014%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26506014&rft_id=info:pmid/&rft_ieee_id=285563&rfr_iscdi=true |