Noise performance of separate absorption, grading, charge and multiplication InP/InGaAs avalanche photodiodes

The noise performance of planar separate absorption, grading, charge and multiplication avalanche photodiodes was investigated at room temperature over a range of integrated charge (2.7-3.3×10/sup 12/ cm/sup -2/) and high field InP thickness (0.09-0.62 μm). It is found that the effective k of 0.38 is nearly independent of these parameters. These observations are consistent with ionization both inside and outside the high-field InP region. Furthermore, the temperature dependence was investigated, with the result that k increases slightly from 0.42 to 0.53 with increasing temperature in the range -30 to +85/spl deg/C.