GaAs 850 nm modulators solder-bonded to silicon

GaAs 850 nm modulators solder-bonded to silicon

GaAs/AlGaAs p-i-n multiple-quantum-well modulators solder-bonded to a silicon substrate are reported. The GaAs substrate is then chemically removed to allow operation at 850 nm. The gold contact to the modulator is used as the reflector. A change in reflectivity from 26% to 52% is achieved for a 0 t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 1993-07, Vol.5 (7), p.776-778
Hauptverfasser: Goossen, K.W., Cunningham, J.E., Jan, W.Y.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Chemicals
Circuit properties
Degradation
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Gallium arsenide
Gold
Integrated optoelectronics. Optoelectronic circuits
Intensity modulation
Ohmic contacts
Optical and optoelectronic circuits
PIN photodiodes
Quantum well devices
Reflectivity
Silicon
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:GaAs/AlGaAs p-i-n multiple-quantum-well modulators solder-bonded to a silicon substrate are reported. The GaAs substrate is then chemically removed to allow operation at 850 nm. The gold contact to the modulator is used as the reflector. A change in reflectivity from 26% to 52% is achieved for a 0 to 10 V bias swing. The device has a modulation saturation intensity of 80 kW/cm/sup 2/, demonstrating superb heat-sinking and ohmic contact. The hybrid was cycled from 30 degrees C to 100 degrees C over a 100 times, and it showed no degradation, exhibiting the practicality of the technique.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.229803