Wide operating wavelength range and low threshold current In/sub 0.24/Ga/sub 0.76/As/GaAs vertical-cavity surface-emitting lasers

Wide operating wavelength range and low threshold current In/sub 0.24/Ga/sub 0.76/As/GaAs vertical-cavity surface-emitting lasers

Very low threshold current density operation of triple quantum well vertical-cavity surface-emitting lasers (VCSELs) is reported. The active wells are strained In/sub 0.24/Ga/sub 0.76/As in GaAs. Devices from the same wafer operate at room temperature over a wavelength range of 958-1042 nm, with a m...

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Veröffentlicht in:IEEE photonics technology letters 1992-11, Vol.4 (11), p.1192-1194
Hauptverfasser: Sale, T.E., Woodhead, J., Grey, R., Robson, P.N.
Format: Artikel
Sprache:eng
Schlagworte:
Gallium arsenide
Indium
Mirrors
Molecular beam epitaxial growth
Optical superlattices
Optical surface waves
Quantum well lasers
Surface emitting lasers
Threshold current
Vertical cavity surface emitting lasers
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Zusammenfassung:Very low threshold current density operation of triple quantum well vertical-cavity surface-emitting lasers (VCSELs) is reported. The active wells are strained In/sub 0.24/Ga/sub 0.76/As in GaAs. Devices from the same wafer operate at room temperature over a wavelength range of 958-1042 nm, with a minimum threshold current density of 366 A-cm/sup -2/ at 1018 nm. The dependence of threshold current on wavelength gives an insight into the optical gain spectrum of the quantum wells. It was shown that 50- mu m-diameter devices operate CW without heatsinking.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.166938