A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications

A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications

Cubic crystalline p-SiCN films are deposited on n-Si[100] substrates to form SiCN/Si heterojunction diodes (HJDs) with a rapid thermal chemical vapor deposition (RTCVD) technique. The developed SiCN/Si HJDs exhibit good rectifying properties up to 200/spl deg/C. At room temperature, the reverse brea...

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Veröffentlicht in:IEEE electron device letters 2002-03, Vol.23 (3), p.142-144
Hauptverfasser: Ting, Shyh-Fann, Fang, Yean-Kuen, Hsieh, Wen-Tse, Tsair, Yong-Shiuan, Chang, Cheng-Nan, Lin, Chun-Sheng, Hsieh, Ming-Chun, Chiang, Hsin-Che, Ho, Jyh-Jier
Format: Artikel
Sprache:eng
Schlagworte:
Breakdown
Chemical vapor deposition
Crystallization
Density
Diodes
Electric potential
Electric resistance
Heterojunctions
Leakage current
Optical films
Semiconductor films
Silicon
Silicon carbonitride
Substrates
Temperature
Voltage
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Zusammenfassung:Cubic crystalline p-SiCN films are deposited on n-Si[100] substrates to form SiCN/Si heterojunction diodes (HJDs) with a rapid thermal chemical vapor deposition (RTCVD) technique. The developed SiCN/Si HJDs exhibit good rectifying properties up to 200/spl deg/C. At room temperature, the reverse breakdown voltage is more than 29 V at the leakage current density of 1.2/spl times/10/sup -4/ A/cm/sup 2/. Even at 200/spl deg/C, the typical breakdown voltage of SiCN/Si HJDs is still preserved about 5 V at the leakage current density of 1.47/spl times/10/sup -4/ A/cm/sup 2/. These properties are better than the /spl beta/-SiC on Si HJDs for high temperature applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.988818