Mismatch of MOSFET small signal parameters under analog operation

Mismatch of MOSFET small signal parameters under analog operation

The matching behavior of drain current I/sub D/ and small signal parameters transconductance g/sub m/ and differential output conductance g/sub DS/ of MOSFETs is investigated under typical analog operating conditions. Whereas for the normalized standard deviations of I/sub D/ and g/sub m/ the well k...

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Veröffentlicht in:IEEE electron device letters 2000-12, Vol.21 (12), p.552-553
Hauptverfasser: Thewes, R., Linnenbank, C., Kollmer, U., Burges, S., Schaper, U., Brederlow, R., Weber, W.
Format: Artikel
Sprache:eng
Schlagworte:
Automotive engineering
Circuit synthesis
CMOS process
Current measurement
Geometry
Measurement standards
MOS devices
MOSFET circuits
Threshold voltage
Transconductance
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Beschreibung
Zusammenfassung:The matching behavior of drain current I/sub D/ and small signal parameters transconductance g/sub m/ and differential output conductance g/sub DS/ of MOSFETs is investigated under typical analog operating conditions. Whereas for the normalized standard deviations of I/sub D/ and g/sub m/ the well known proportionality to (W/spl times/L/sub eff/)/sup -1/2/ is obtained, the normalized standard deviation of g/sub DS/ clearly deviates from this width and length dependence. For this parameter, a proportionality to W/sup -1/2/ is found.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.887462