Novel cleaning solutions for polysilicon film post chemical mechanical polishing

Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH/sub 4/OH+H/sub 2/O) alkaline aqueous solution to enhance removal of meta...

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Veröffentlicht in:IEEE electron device letters 2000-07, Vol.21 (7), p.338-340
Hauptverfasser: Tung Ming Pan, Tan Fu Lei, Chao Chyi Chen, Tien Sheng Chao, Ming Chi Liaw, Wen Lu Yang, Ming Shih Tsai, Lu, C.P., Chang, W.H.
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Sprache:eng
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