Novel cleaning solutions for polysilicon film post chemical mechanical polishing
Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH/sub 4/OH+H/sub 2/O) alkaline aqueous solution to enhance removal of meta...
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Veröffentlicht in: | IEEE electron device letters 2000-07, Vol.21 (7), p.338-340 |
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Sprache: | eng |
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