Novel cleaning solutions for polysilicon film post chemical mechanical polishing

Novel cleaning solutions for polysilicon film post chemical mechanical polishing

Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH/sub 4/OH+H/sub 2/O) alkaline aqueous solution to enhance removal of meta...

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Veröffentlicht in:IEEE electron device letters 2000-07, Vol.21 (7), p.338-340
Hauptverfasser: Tung Ming Pan, Tan Fu Lei, Chao Chyi Chen, Tien Sheng Chao, Ming Chi Liaw, Wen Lu Yang, Ming Shih Tsai, Lu, C.P., Chang, W.H.
Format: Artikel
Sprache:eng
Schlagworte:
Acetic acid
Alkaline cleaning
Ammonium hydroxide
Aqueous solutions
Brushes
Chaos
Chemicals
Cleaning
Contamination
Diamines
Electric variables
Ethylene
Goniometers
Impurities
Mechanical polishing
Pollution measurement
Silicon
Surface contamination
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Beschreibung
Zusammenfassung:Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH/sub 4/OH+H/sub 2/O) alkaline aqueous solution to enhance removal of metallic and organic contamination. From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.847373