Novel cleaning solutions for polysilicon film post chemical mechanical polishing
Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH/sub 4/OH+H/sub 2/O) alkaline aqueous solution to enhance removal of meta...
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| Veröffentlicht in: | IEEE electron device letters 2000-07, Vol.21 (7), p.338-340 |
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| container_title | IEEE electron device letters |
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| creator | Tung Ming Pan Tan Fu Lei Chao Chyi Chen Tien Sheng Chao Ming Chi Liaw Wen Lu Yang Ming Shih Tsai Lu, C.P. Chang, W.H. |
| description | Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH/sub 4/OH+H/sub 2/O) alkaline aqueous solution to enhance removal of metallic and organic contamination. From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning. |
| doi_str_mv | 10.1109/55.847373 |
| format | Article |
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From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.847373</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Acetic acid ; Alkaline cleaning ; Ammonium hydroxide ; Aqueous solutions ; Brushes ; Chaos ; Chemicals ; Cleaning ; Contamination ; Diamines ; Electric variables ; Ethylene ; Goniometers ; Impurities ; Mechanical polishing ; Pollution measurement ; Silicon ; Surface contamination</subject><ispartof>IEEE electron device letters, 2000-07, Vol.21 (7), p.338-340</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2000</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-7227018bc20e9a08a65d61660990e11ecf45453c1c7d48d32a404cf0b6ed75883</citedby><cites>FETCH-LOGICAL-c368t-7227018bc20e9a08a65d61660990e11ecf45453c1c7d48d32a404cf0b6ed75883</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/847373$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,782,786,798,27931,27932,54765</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/847373$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Tung Ming Pan</creatorcontrib><creatorcontrib>Tan Fu Lei</creatorcontrib><creatorcontrib>Chao Chyi Chen</creatorcontrib><creatorcontrib>Tien Sheng Chao</creatorcontrib><creatorcontrib>Ming Chi Liaw</creatorcontrib><creatorcontrib>Wen Lu Yang</creatorcontrib><creatorcontrib>Ming Shih Tsai</creatorcontrib><creatorcontrib>Lu, C.P.</creatorcontrib><creatorcontrib>Chang, W.H.</creatorcontrib><title>Novel cleaning solutions for polysilicon film post chemical mechanical polishing</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH/sub 4/OH+H/sub 2/O) alkaline aqueous solution to enhance removal of metallic and organic contamination. From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.</description><subject>Acetic acid</subject><subject>Alkaline cleaning</subject><subject>Ammonium hydroxide</subject><subject>Aqueous solutions</subject><subject>Brushes</subject><subject>Chaos</subject><subject>Chemicals</subject><subject>Cleaning</subject><subject>Contamination</subject><subject>Diamines</subject><subject>Electric variables</subject><subject>Ethylene</subject><subject>Goniometers</subject><subject>Impurities</subject><subject>Mechanical polishing</subject><subject>Pollution measurement</subject><subject>Silicon</subject><subject>Surface contamination</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0TtPwzAQAGALgUQpDKxMEQOCIcWO3yOqeEkVMMAcuc6FGjlxiROk_ntcpWJggMGydf58Z_sQOiV4RgjW15zPFJNU0j00IZyrHHNB99EES0ZySrA4REcxfmBMGJNsgl6ewhf4zHowrWvfsxj80LvQxqwOXbYOfhOddza0We18kwKxz-wKGmeNzxqwq3Rsu0zSxVXKcIwOauMjnOzmKXq7u32dP-SL5_vH-c0it1SoPpdFITFRS1tg0AYrI3gliBBYawyEgK0ZZ5xaYmXFVEULwzCzNV4KqCRXik7RxZh33YXPAWJfNi5a8N60EIZYFukblBbF_1AKSlkaU3T5JyRCEqqkljLR81_0Iwxdm95bap2qprtvC1-NyHYhxg7qct25xnSbkuBy26yS83JsVrJno3UA8ON2m99fmI2b</recordid><startdate>20000701</startdate><enddate>20000701</enddate><creator>Tung Ming Pan</creator><creator>Tan Fu Lei</creator><creator>Chao Chyi Chen</creator><creator>Tien Sheng Chao</creator><creator>Ming Chi Liaw</creator><creator>Wen Lu Yang</creator><creator>Ming Shih Tsai</creator><creator>Lu, C.P.</creator><creator>Chang, W.H.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/55.847373</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2000-07, Vol.21 (7), p.338-340 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Acetic acid Alkaline cleaning Ammonium hydroxide Aqueous solutions Brushes Chaos Chemicals Cleaning Contamination Diamines Electric variables Ethylene Goniometers Impurities Mechanical polishing Pollution measurement Silicon Surface contamination |
| title | Novel cleaning solutions for polysilicon film post chemical mechanical polishing |
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