60-GHz pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.28/Ga/sub 0.72/As low-noise HEMTs

60-GHz pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.28/Ga/sub 0.72/As low-noise HEMTs

V-band low-noise planar-doped pseudomorphic (PM) InGaAs high electron mobility transistors (HEMTs) were fabricated with an indium mole fraction of 28% in the InGaAs channel. A device with 0.15- mu m T-gate achieved a minimum noise figure of 1.5 dB with an associated gain of 6.1 dB at 61.5 GHz.< &...

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Veröffentlicht in:IEEE electron device letters 1991-01, Vol.12 (1), p.23-25
Hauptverfasser: Tan, K.L., Dia, R.M., Streit, D.C., Shaw, L.K., Han, A.C., Sholley, M.D., Liu, P.H., Trinh, T.Q., Lin, T., Yen, H.C.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum
Electrons
Fabrication
Gain
Gallium arsenide
HEMTs
Indium compounds
Indium gallium arsenide
MODFETs
Noise figure
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Zusammenfassung:V-band low-noise planar-doped pseudomorphic (PM) InGaAs high electron mobility transistors (HEMTs) were fabricated with an indium mole fraction of 28% in the InGaAs channel. A device with 0.15- mu m T-gate achieved a minimum noise figure of 1.5 dB with an associated gain of 6.1 dB at 61.5 GHz.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.75686