Improved CMOS field isolation using germanium/boron implantation
A novel germanium/boron implantation technique for improving the electrical field isolation of high-density CMOS circuits is demonstrated. Germanium implantation causes a reduction in dopant diffusion and segregation during field oxidation and is shown to increase the p-well field threshold voltage...
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| Veröffentlicht in: | IEEE electron device letters 1988-08, Vol.9 (8), p.391-393 |
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| container_end_page | 393 |
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| container_issue | 8 |
| container_start_page | 391 |
| container_title | IEEE electron device letters |
| container_volume | 9 |
| creator | Pfiester, J.R. Alvis, J.R. |
| description | A novel germanium/boron implantation technique for improving the electrical field isolation of high-density CMOS circuits is demonstrated. Germanium implantation causes a reduction in dopant diffusion and segregation during field oxidation and is shown to increase the p-well field threshold voltage by as much as 40% with no significant degradation to junction or device performance. Selective germanium implantation with a blanket boron field implant can also improve the electrical field isolation behavior for CMOS circuits.< > |
| doi_str_mv | 10.1109/55.754 |
| format | Article |
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Germanium implantation causes a reduction in dopant diffusion and segregation during field oxidation and is shown to increase the p-well field threshold voltage by as much as 40% with no significant degradation to junction or device performance. Selective germanium implantation with a blanket boron field implant can also improve the electrical field isolation behavior for CMOS circuits.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.754</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Boron ; Circuits ; Degradation ; Electronics ; Exact sciences and technology ; Fabrication ; Germanium ; Implants ; Microelectronic fabrication (materials and surfaces technology) ; MOS devices ; Oxidation ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Germanium implantation causes a reduction in dopant diffusion and segregation during field oxidation and is shown to increase the p-well field threshold voltage by as much as 40% with no significant degradation to junction or device performance. Selective germanium implantation with a blanket boron field implant can also improve the electrical field isolation behavior for CMOS circuits.< ></description><subject>Applied sciences</subject><subject>Boron</subject><subject>Circuits</subject><subject>Degradation</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Germanium</subject><subject>Implants</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>MOS devices</subject><subject>Oxidation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Threshold voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNqN0EtLw0AQB_BFFIxVr15zEG9p9zWb3ZtSfBQqPajnsEknZSWPupsIfntXW-zV08DMj5nhT8glo1PGqJkBTHOQRyRhADqjoMQxSWguWSYYVafkLIR3SpmUuUzI7aLd-v4T1-n8efWS1g6bdepC39jB9V06Btdt0g361nZubGdl72PXtdvGdsMvOScntW0CXuzrhLw93L_On7Ll6nExv1tmleBqyEq0inErIDcMKTCel8oAlkYog9rICnjNjICSUc4UlFqD0ZSVKCkIpaWYkJvd3vjux4hhKFoXKmziI9iPoeBaGFD8H1AaiEf0AVa-D8FjXWy9a63_KhgtfpIsAIqYZITX-402VLapve0qF_50zqNRPLKrHXOIeJjG4TfEIXdx</recordid><startdate>19880801</startdate><enddate>19880801</enddate><creator>Pfiester, J.R.</creator><creator>Alvis, J.R.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19880801</creationdate><title>Improved CMOS field isolation using germanium/boron implantation</title><author>Pfiester, J.R. ; Alvis, J.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c326t-bea612a35791e05127b695eb9369e894c52f1935b102165b8859801be40536843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Applied sciences</topic><topic>Boron</topic><topic>Circuits</topic><topic>Degradation</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Germanium</topic><topic>Implants</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>MOS devices</topic><topic>Oxidation</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Threshold voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pfiester, J.R.</creatorcontrib><creatorcontrib>Alvis, J.R.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pfiester, J.R.</au><au>Alvis, J.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved CMOS field isolation using germanium/boron implantation</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1988-08-01</date><risdate>1988</risdate><volume>9</volume><issue>8</issue><spage>391</spage><epage>393</epage><pages>391-393</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A novel germanium/boron implantation technique for improving the electrical field isolation of high-density CMOS circuits is demonstrated. Germanium implantation causes a reduction in dopant diffusion and segregation during field oxidation and is shown to increase the p-well field threshold voltage by as much as 40% with no significant degradation to junction or device performance. Selective germanium implantation with a blanket boron field implant can also improve the electrical field isolation behavior for CMOS circuits.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.754</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1988-08, Vol.9 (8), p.391-393 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_55_754 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Boron Circuits Degradation Electronics Exact sciences and technology Fabrication Germanium Implants Microelectronic fabrication (materials and surfaces technology) MOS devices Oxidation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Threshold voltage |
| title | Improved CMOS field isolation using germanium/boron implantation |
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