Improved CMOS field isolation using germanium/boron implantation

Improved CMOS field isolation using germanium/boron implantation

A novel germanium/boron implantation technique for improving the electrical field isolation of high-density CMOS circuits is demonstrated. Germanium implantation causes a reduction in dopant diffusion and segregation during field oxidation and is shown to increase the p-well field threshold voltage...

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Veröffentlicht in:IEEE electron device letters 1988-08, Vol.9 (8), p.391-393
Hauptverfasser: Pfiester, J.R., Alvis, J.R.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Boron
Circuits
Degradation
Electronics
Exact sciences and technology
Fabrication
Germanium
Implants
Microelectronic fabrication (materials and surfaces technology)
MOS devices
Oxidation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Threshold voltage
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Zusammenfassung:A novel germanium/boron implantation technique for improving the electrical field isolation of high-density CMOS circuits is demonstrated. Germanium implantation causes a reduction in dopant diffusion and segregation during field oxidation and is shown to increase the p-well field threshold voltage by as much as 40% with no significant degradation to junction or device performance. Selective germanium implantation with a blanket boron field implant can also improve the electrical field isolation behavior for CMOS circuits.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.754