Cosmic ray neutron-induced soft errors in sub-half micron CMOS circuits

We numerically investigated cosmic ray neutron-induced soft errors in sub-half micron CMOS SRAM and latch circuits at sea level. For our purpose, we developed an original simulator which reproduces well the experimental charge collection data. We investigated soft error rates (SERs) and showed that...

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Veröffentlicht in:	IEEE Electron Device Letters 1997-03, Vol.18 (3), p.99-101
Hauptverfasser:	Tosaka, Y., Satoh, S., Itakura, T., Suzuki, K., Sugii, T., Ehara, H., Woffinden, G.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atmospheric modeling CHARGE COLLECTION Circuit simulation COSMIC NEUTRONS Diodes ELECTRONIC CIRCUITS ERRORS INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Latches Neutrons Nuclear power generation NUMERICAL ANALYSIS PHYSICAL RADIATION EFFECTS Random access memory SEMICONDUCTOR STORAGE DEVICES Silicon Testing
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