Cosmic ray neutron-induced soft errors in sub-half micron CMOS circuits

We numerically investigated cosmic ray neutron-induced soft errors in sub-half micron CMOS SRAM and latch circuits at sea level. For our purpose, we developed an original simulator which reproduces well the experimental charge collection data. We investigated soft error rates (SERs) and showed that...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE Electron Device Letters 1997-03, Vol.18 (3), p.99-101
Hauptverfasser: Tosaka, Y., Satoh, S., Itakura, T., Suzuki, K., Sugii, T., Ehara, H., Woffinden, G.A.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We numerically investigated cosmic ray neutron-induced soft errors in sub-half micron CMOS SRAM and latch circuits at sea level. For our purpose, we developed an original simulator which reproduces well the experimental charge collection data. We investigated soft error rates (SERs) and showed that the neutron-induced SERs in the SRAM are the same order as those due to /spl alpha/-particles and the SERs in the latch are dominated by neutrons.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.556093